Mask production at POG involves typical lithography processes including layout design, processing of resists, exposure by electron beam lithography and development. We process a variety of semiconductor and glass wafer mask substrates.
- Completion of masks or direct exposure of glass substrates 4" x 4" / 5" x 5" / 6" x 6" / 7" x 7" (maximum thickness: 3mm) - other sizes are available upon request
- Exposure of glass wafers ø 2,5" / ø 3" / ø 4" / ø 5" / ø 6"
- Smallest structure dimensions in resist: 0,2µm
- Smallest final structure dimensions: approxiamtely 0,5µm
- Interfaces for layout design: CIF, DXF, GDS2, MEBES
- Unit: Vistec ZBA 23